Insulating ground state of Sn/Si(111)-(3×3)R30°

Physical Review Letters

Volumn 98, Issue 12, 2007, Pages

  Modesti, S ^a,b   Petaccia, L ^a,c   Ceballos, G ^a   Vobornik, I ^a   Panaccione, G ^a   Rossi, G ^a,d   Ottaviano, L ^e   Larciprete, R ^c,f   Lizzit, S ^c   Goldoni, A ^c  

^a LABORATORIO TASC   (Italy)

^b UNIVERSITY OF TRIESTE   (Italy)

^c SINCROTRONE TRIESTE   (Italy)

^d UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^e UNIVERSITY OF L'AQUILA   (Italy)

^f ISC CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC DENSITY OF STATES; ELECTRONIC STATES; FERMI LEVEL; GROUND STATE; SCANNING TUNNELING MICROSCOPY;

MOTT HUBBARD GROUND STATE; TUNNELING SPECTROSCOPY;

BINARY ALLOYS;

EID: 33947397522     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.98.126401     Document Type: Article

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