An inverse class-F GaN HEMT power amplifier with 78% PAE at 3.5 GHz

European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 39th European Microwave Conference, EuMC 2009

Volumn , Issue , 2009, Pages 496-499

  Saad, Paul ^a   Nemati, Hossein Mashad ^a   Thorsell, Mattias ^a   Andersson, Kristoffer ^a   Fager, Christian ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS-WAVE SIGNALS; DRAIN EFFICIENCY; GAN HEMTS; HIGH POWER APPLICATIONS; HIGH-POWER; INVERSE CLASS F; MEASUREMENT RESULTS; OUTPUT POWER; OUTPUT POWER LEVELS; POWER-ADDED EFFICIENCY; SWITCHING MODES;

GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM;

MICROWAVES;

EID: 72949084410     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMC.2009.5296560     Document Type: Conference Paper

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