A compact 12-watt high-efficiency 2.1-2.7 GHz class-E GaN HEMT power amplifier for base stations

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2009, Pages 657-660

  Van Der Heijden, Mark P ^a   Acar, Mustafa ^a   Vromans, Jan S ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Base station; Broadband; Class E; Gallium nitride (GaN); High electron mobility transistor (HEMT); Power amplifier (PA); Power added efficiency (PAE); RF circuit design

Indexed keywords

BROADBAND; CLASS E; POWER-ADDED EFFICIENCY; POWER-ADDED EFFICIENCY (PAE); RF CIRCUIT DESIGN;

BASE STATIONS; DESIGN; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INSULATING MATERIALS; INTEGRATED CIRCUIT MANUFACTURE; MICROWAVES; POWER AMPLIFIERS; TUNING;

BROADBAND AMPLIFIERS;

EID: 77950018241     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2009.5165782     Document Type: Conference Paper

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