High-temperature thermoelectric characterization of III-V semiconductor thin films by oxide bonding

Journal of Electronic Materials

Volumn 39, Issue 8, 2010, Pages 1125-1132

  Bahk, Je Hyeong ^a   Zeng, Gehong ^a   Zide, Joshua M O ^b   Lu, Hong ^a   Singh, Rajeev ^c   Liang, Di ^a   Ramu, Ashok T ^a   Burke, Peter ^a   Bian, Zhixi ^c   Gossard, Arthur C ^a   Shakouri, Ali ^c   Bowers, John E ^a  

^a University of California   (United States)

^b UNIVERSITY OF DELAWARE   (United States)

^c University of California Santa Cruz   (United States)

Author keywords

High temperature measurements; Oxide bonding; Substrate removal; Thermoelectric

Indexed keywords

BONDING TECHNIQUES; COVALENT BONDING; DEVICE FABRICATIONS; EFFECT OF STRAIN; ELECTRICAL CONDUCTIVITY; HIGH TEMPERATURE; HIGH TEMPERATURE MEASUREMENT; HIGH-TEMPERATURE MEASUREMENTS; II-IV SEMICONDUCTORS; INGAALAS; INP; INP SUBSTRATES; LATTICE-MATCHED; MEASUREMENT METHODS; MEASUREMENT RESULTS; METALLIZATIONS; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; SIDE EFFECT; SUBSTRATE CONDUCTION; SUBSTRATE REMOVAL; SURFACE PASSIVATION; THERMOELECTRIC CHARACTERIZATION; THERMOELECTRIC MATERIAL;

CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OXIDE FILMS; PASSIVATION; SAPPHIRE; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; TEMPERATURE MEASUREMENT;

SUBSTRATES;

EID: 77954624879     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1258-5     Document Type: Article

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