Inductively coupled plasma - Plasma enhanced chemical vapor deposition silicon nitride for passivation of InP based high electron mobility transistors (HEMTs)

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 80, Issue 1-3, 2001, Pages 252-256

  Medjdoub, M ^a   Courant, J L ^a   Maher, H ^a   Post, G ^a  

^a OPTO+   (France)

Author keywords

HEMT; ICP PECVD; InP; Interface; Passivation; SiN

Indexed keywords

AMMONIA; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CURRENT MEASUREMENT; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; INDUCTIVELY COUPLED PLASMA; INTERFACES (MATERIALS); NITROGEN; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DIODES; SILANES; SILICON NITRIDE; VOLTAGE MEASUREMENT;

METAL INSULATING SEMICONDUCTOR (MIS) DIODES;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0035932314     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00649-8     Document Type: Article

References (6)