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Volumn 251, Issue 1-4, 2003, Pages 243-247

Growth and microstructure of semimetallic ErAs particles embedded in an In0.53Ga0.47As matrix

(4) Driscoll, Daniel C a Hanson, Micah P a Mueller, Elisabeth b Gossard, Arthur C a

a University of California (United States)

Author keywords

A1. Atomic force microscopy; A1. Nanostructures; A3. Molecular beam epitaxy; B1. Rare earth compounds; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL MICROSTRUCTURE; ERBIUM COMPOUNDS; METALLOIDS; MOLECULAR BEAM EPITAXY; MONOLAYERS; MORPHOLOGY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUBSTRATES; SURFACE ROUGHNESS; SURFACES; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL MATERIALS;

EPITAXIAL GROWTH;

EID: 0037382421 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(02)02511-3 Document Type: Conference Paper

Times cited : (33)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.