SCOPUS 정보 검색 플랫폼

Volumn 8, Issue 1, 2004, Pages 22-26

Diffusion barrier properties of reactively sputtered W-Ti-N thin films

(8) Kuchuk, A V a Kladko, V P a Machulin, V F a Piotrowska, A b Kaminska, E b Golaszewska, K b Ratajczak, R c Minikayev, R d

a INSTITUTE OF SEMICONDUCTOR PHYSICS (Ukraine)

b ukasiewicz Research Network Institute of Microelectronics and Photonics (Poland)

c SOLTAN INSTITUTE FOR NUCLEAR STUDIES (Poland)

d INSTITUTE OF PHYSICS (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIFFUSION; FILM GROWTH; GOLD; MAGNETRON SPUTTERING; MATERIALS TESTING; PROFILOMETRY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SPUTTER DEPOSITION; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

DIFFUSION BARRIER; FILM GROWTH RATE; FOUR POINT PROBE SHEET RESISTANCE MEASUREMENTS; REACTIVE MAGNETRON SPUTTERING; TUNGSTEN TITANIUM NITRIDE;

TUNGSTEN COMPOUNDS;

EID: 12944273335 PISSN: 16065131 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (9)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.