Study of metal contamination in CMOS image sensors by dark-current and deep-level transient spectroscopies

Journal of Electronic Materials

Volumn 39, Issue 6, 2010, Pages 625-629

  Domengie, F ^a,b   Regolini, J L ^a   Bauza, D ^b  

^a STMICROELECTRONICS   (France)

^b IMEP LAHC   (France)

Author keywords

Contamination; Dark current; Deep level; Gold; Image sensors; Tungsten

Indexed keywords

CMOS IMAGE SENSOR; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CRITICAL ISSUES; CRUCIAL PARAMETERS; DEEP LEVEL; METAL CONTAMINATION; METALLIC CONTAMINATION;

CONTAMINATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIGITAL IMAGE STORAGE; GOLD; IMAGE SENSORS; PIXELS; TUNGSTEN;

DARK CURRENTS;

EID: 77954623430     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1212-6     Document Type: Article

References (23)

1. M. Bigas, E. Cabruja, J. Forest, and J. Salvi, Microelectron. J. 37, 433 (2006).
2. A. El Gamal and H. Eltoukhy, IEEE Circuit. Dev. 21, 6 (2005).
3. K. Tokashiki, K. Bai, K. Baek, Y. Kim, G. Min, C. Kang, H. Cho, and J. Moon, Thin Solid Films 515, 4864 (2007).
4. Y. Kunimi and B. Pain, Proceedings of the 2007 International Image Sensor Workshop, Ogunquit Maine, USA, June 7-10, 2007, p. 66.
5. E. Colelli, A. Galbiati, D. Caputo, M.L. Polignano, V. Soncini, and G. Salva, Proceedings of the 8th International Symposium on Plasma and Process Induced Damage, Corbeil-Essonnes, France, April 24-25, 2003, p. 81.
6. R.B. Liebert, G.C. Angel, and M. Kase, Proceedings of the 11th International Conference on Ion Implantation Technology, Austin Texas, USA, June 16-21, 1996, p. 135.
7. W.C. McColgin, J.P. Lavine, and C.V. Stancampiano, Mater. Res. Soc. Symp. Proc. 378, 713 (1995).
8. W.C. McColgin, J.P. Lavine, C.V. Stancampiano, and J.B. Russell, Mater. Res. Soc. Symp. Proc. 510, 475 (1998).
9. R.D. McGrath, J. Dory, G. Lupino, G. Ricker, and J. Vallerga, IEEE Trans. Electron. Dev. 34, 2555 (1987).
10. C. Tivarus and W.C. McColgin, IEEE Trans. Nucl. Sci. 55, 1719 (2008).
11. H.I. Kwon, I.M. Kang, B.-G. Park, J.D. Lee, and S.S. Park, IEEE Trans. Electron. Dev. 51, 178 (2004).
12. M. Cohen, F. Roy, D. Herault, Y. Cazaux, A. Gandolfi, J.P. Reynard, C. Cowache, E. Bruno, T. Girault, J. Vaillant, F. Barbier, Y. Sanchez, N. Hotellier, O. LeBorgne, C. Augier, A. Inard, T. Jagueneau, C. Zinck, J. Michailos, and E. Mazaleyrat, IEDM Technical Digest, 2006, pp. 127-130.
13. K. Graff, Metal Impurities in Silicon-Device Fabrication (Berlin: Springer, 2000).
14. D.K. Schroder, Semiconductor Material and Device Characterization (New York: Wiley, 1998).
15. D.K. Schroder, IEEE Trans. Electron. Dev. 29, 1336 (1982).
16. E. Simoen and C. Claeys, IEEE Trans. Electron. Dev. 46, 1487 (1999).
17. W.J. Toren (PhD thesis, Twente University, 1997).
18. J. Bogaerts, B. Dierickx, and R. Mertens, IEEE Trans. Nucl. Sci. 49, 1513 (2002).
19. A.F. Tasch Jr. and C.T. Sah, Phys. Rev. B 1, 800 (1970).
20. R. Kalyanaraman, T.E. Haynes, V.C. Venezia, D.C. Jacobson, H.-J. Gossmann, and C.S. Rafferty, Appl. Phys. Lett. 76, 3379 (2000).
21. M. Schulz, A. Goetzberger, I. Franz, and W. Langheinrich, Appl. Phys. AMater. 3, 275 (1974).
22. S.J. Pearton and A.J. Tavendale, Phys. Rev. B 26, 7105 (1982).
23. S. Diez, S. Rein, and S.W. Glunz, Proceedings of the 20th European Photovoltaic Solar Energy Conference, Barcelona, Spain, June 6-10, 2005, p. 1216.