Metal contamination monitoring in ion implantation technology

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn 2003-January, Issue , 2003, Pages 81-84

  Colelli, E ^a   Galbiati, A ^a   Caputo, D ^a   Polignano, M L ^a   Soncini, V ^a   Salva, G ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LIFETIME; CONTAMINATION; DEGRADATION; DIFFUSION COATINGS; ION IMPLANTATION; IONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS;

CONTAMINATION CONTROL; HIGH CURRENT ION IMPLANTER; ION IMPLANTATION TECHNOLOGIES; IRON CONCENTRATIONS; METAL CONTAMINATION; MINORITY CARRIER LIFETIMES; PERIODIC MAINTENANCE; SURFACE PHOTO VOLTAGES;

POLLUTION DETECTION;

EID: 84973623335     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PPID.2003.1200923     Document Type: Conference Paper

References (7)

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6. D. Caputo, P. Bacciaglia, C. Carpanese, M. L. Polignano, P. Lazzeri, M. Bersani, L. Vanzetti, P. Pianetta, L. Moro, "Quantitative evaluation of iron at the silicon surface after wet cleaning treatments", in Electrochemical Society Fall Meeting, Salt Lake City, October 2002.
7. K. Wurstel and P. Wagner, "Iron-related deep levels in silicon", Solid-St. Comm.. 40, 707 (1981).