Optical characterization of defect-related carrier recombination and transport features in GaN substrates and CVD diamonds

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 1301-1304

  Jarasiunas, K ^a   Malinauskas, T ^a   Aleksiejunas, R ^a   Monemar, B ^b   Ralchenko, V ^c   Gontar, A ^d   Ivakin, E ^e  

^a VILNIUS UNIVERSITY   (Lithuania)

^b LINKÖPING UNIVERSITY   (Sweden)

^c PROKHOROV GENERAL PHYSICS INSTITUTE   (Russian Federation)

^d BAKUL INSTITUTE FOR SUPERHARD MATERIALS   (Ukraine)

^e B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

Author keywords

Diamonds; GaN; Transient grating technique

Indexed keywords

CARRIER LIFETIME; DEFECTS; DIAMONDS; GALLIUM NITRIDE; SUBSTRATES;

CARRIER GENERATION; CARRIER RECOMBINATION; CARRIERS TRANSPORT; CVD DIAMOND; DEEP DEFECTS; DIAMOND LAYERS; GAN SUBSTRATE; INTER-BAND TRANSITION; OPTICAL CHARACTERIZATION; TRANSIENT GRATING TECHNIQUE;

III-V SEMICONDUCTORS;

EID: 63849238159     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.1301     Document Type: Conference Paper

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