Memory effect of an organic based trilayer structure with Au nanocrystals in an insulating polymer matrix

Nanotechnology

Volumn 21, Issue 29, 2010, Pages

  Lee, P F ^a   Dai, J Y ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

AU NANOCRYSTALS; AVERAGE SIZE; C-V CURVE; CAPACITANCE VOLTAGE MEASUREMENTS; CONTROL LAYERS; COUNTER-CLOCKWISE; DOUBLE BARRIERS; DOUBLE-LOOP; FLAT-BAND VOLTAGE SHIFT; INSULATING POLYMER; MATRIX; MEMORY EFFECTS; MEMORY STRUCTURE; NON-VOLATILE MEMORIES; P-TYPE SI; POLYVINYL PYRROLIDONE; SWITCHING MECHANISM; TRILAYER STRUCTURE; UNIQUE FEATURES;

NANOCRYSTALS; SCANNING ELECTRON MICROSCOPY; THRESHOLD VOLTAGE; TRANSMISSION ELECTRON MICROSCOPY;

HYSTERESIS;

EID: 77954416138     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/29/295706     Document Type: Article

References (42)

1. Scott J C 2004 Science 304 62
2. Prime D and Paul S 2009 Phil. Trans. R. Soc. A 367 4141
3. Ouyang J, Chu C-W, Szmanda C R, Ma L and Yang Y 2004 Nat. Mater. 3 918
4. Bozano L D, Kean B W, Beinhoff M, Carter K R, Rice P M and Scott J C 2005 Adv. Funct. Mater. 15 1933
5. Yang Y, Ouyang J, Ma L, Tseng R J-H and Chu C-W 2006 Adv. Funct. Mater. 16 1001
6. Scott J C and Bozano L D 2007 Adv. Mater. 19 1452
7. Ma L P, Pyo S, Ouyang J, Xu Q and Yang Y 2003 Appl. Phys. Lett. 82 1419
8. He J, Ma L P, Wu J and Yang Y 2005 J. Appl. Phys. 97 064507
9. Pyo S, Ma L P, He J, Xu Q, Yang Y and Gao Y 2005 J. Appl. Phys. 98 054303
10. Bozano L D, Kean B W, Deline V R, Salem J R and Scott J C 2004 Appl. Phys. Lett. 84 607
11. Tondelier D, Lmimouni K and Vuillaume D 2004 Appl. Phys. Lett. 85 5763
12. Paul S, Pearson C, Molloy A, Cousins M A, Green M, Kolliopoulou S, Dimitrakis P, Normand P, Tsoukalas D and Petty M C 2003 Nano Lett. 3 533
13. Leong W L, Lee P S, Mhaisalkar S G, Chen T P and Dodabalapur A 2007 Appl. Phys. Lett. 90 042906
14. Ouyang J Y, Chu C W, Sieves D and Yang Y 2005 Appl. Phys. Lett. 86 123507
15. Ouyang J Y, Chu C W, Tseng R J-H, Prakash A and Yang Y 2005 Proc. IEEE 93 1287
16. Prime D and Paul S 2008 Adv. Sci. Technol. 54 480
17. Prakash A, Ouyang J, Lin J-L and Yang Y 2006 J. Appl. Phys. 100 054309
18. Song Y, Ling Q D, Lim S L, Teo E Y H, Tan Y P, Li L, Kang E T, Chan D S H and Zhu C 2007 IEEE Electron Device Lett. 28 107
19. Lin H T, Pei Z W, Chen J-R, Hwang G-W, Fan J-F and Chan Y-J 2007 IEEE Electron Device Lett. 28 951
20. Tseng R J, Tsai C L, Ma L, Ouyang J, Ozkan C S and Yang Y 2006 Nat. Nanotechnol. 1 72
21. Tseng R J, Ouyang J, Chu C-W, Huang J and Yang Y 2006 Appl. Phys. Lett. 88 123506
22. Kim C K, Joo W-J, Kim H J, Song E S, Kim J, Lee S, Park C and Kim C 2008 Synth. Met. 158 359
23. Lai P Y and Chen J S 2008 Appl. Phys. Lett. 93 153305
24. Leong W L, Lee P S, Lohani A, Lam Y M, Chen T, Zhang S, Dodabalapur A and Mhaisalkar S G 2008 Adv. Mater. 20 2325
25. Zhen L, Guan W, Shang L, Liu M and Liu G 2008 J. Phys. D: Appl. Phys. 41 135111
26. Kanwal A, Paul S and Chhowalla M 2005 Mater. Res. Soc. Symp. Proc. 830 D7.2.1
27. Majumdar H S, Baral J K, Osterbacka R, Ikkala O and Stubb H 2005 Org. Electron. 6 188
28. Paul S, Kanwal A and Chhowalla M 2006 Nanotechnology 17 145
29. Kanwal A and Chhowalla M 2006 Appl. Phys. Lett. 89 203103
30. Ham J H, Jumg J H, Kim H J, Lee D U and Kim T W 2008 Japan. J. Appl. Phys. 47 4988
31. Ma L P, Xu Q F and Yang Y 2004 Appl. Phys. Lett. 84 4908
32. Ling Q D, Song Y, Ding S J, Zhu C, Chan D S H, Kwong D-L, Kang E-T and Neoh K-G 2005 Adv. Mater. 17 455
33. Majee S K, Majumdar H S, Bolognesi A and Pal A J 2006 Synth. Met. 156 828
34. Pradhan B, Batabyal S K and Pal A J 2006 J. Phys. Chem. B 110 8274
35. Jung J H, Kim J-H, Kim T W, Song M S, Kim Y-H and Jin S 2006 Appl. Phys. Lett. 89 122110
36. Tiwari S, Rana F, Hanafi H, Hartstein A, Crabbe E F and Chan K 1996 Appl. Phys. Lett. 68 1377
37. Tiwari S, Rana F, Chan K, Hanafi H, Chan W and Buchanan D 1995 IEDM Tech. Dig. 521
38. Kim J K, Cheong H J, Kim Y, Yi J-Y, Bark H J, Bang S H and Cho J H 2003 Appl. Phys. Lett. 82 2527
39. Liu Z T, Lee C H, Narayanan V, Pei G and Kan E C 2002 IEEE Trans. Electron Devices 49 1606
40. Liu Z T, Lee C H, Narayanan V, Pei G and Kan E C 2002 IEEE Trans. Electron Devices 49 1614
41. Sun K, Vaasudev M, Jung H-S, Yang J, Kar A, Li Y, Reinhardt K, Snee P, Stroscio M A and Dutta M 2009 Microelectron. J. 40 644
42. Sze S M 1981 Physics of Semiconductor Devices 2nd edn (New York: Wiley) p282