E-beam writing time improvement for Inverse Lithography Technology mask for full-chip

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7748, Issue , 2010, Pages

  Xiao, Guangming ^a   Son, Dong Hwan ^a   Cecil, Tom ^a   Irby, Dave ^a   Kim, David ^a   Baik, Ki Ho ^a   Kim, Byung Gook ^b   Jung, SungGon ^b   Suh, Sung Soo ^b   Cho, HanKu ^b  

^a Luminescent Technologies Inc   (United States)

^b SAMSUNG Electronics   (South Korea)

Author keywords

e beam mask write time; Inverse lithography technology (ILT); Resolution enhancement technology (RET); Sub resolution assist feature (SRAF)

Indexed keywords

INVERSE LITHOGRAPHY; INVERSE LITHOGRAPHY TECHNOLOGY (ILT); MASK WRITE TIME; RESOLUTION ENHANCEMENT TECHNOLOGY; SUB-RESOLUTION ASSIST FEATURE;

MASKS;

TECHNOLOGY;

EID: 77954412053     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.867995     Document Type: Conference Paper

References (5)

1. Abrams, S. and Pang, L., "Fast inverse lithography technology", 31st International Symposium of Microlithography, Proc. SPIE 6154 (2006).
2. Pang, L., et al, "Inverse Lithography Technology (ILT): Keep the balance between SRAF and MRC at 45 and 32nm", Proc. SPIE Vol. 6730, (2007).
3. Pang, L., Xiao, G., Tolani, V., Hu, P., Cecil, T., Dam, T., Baik, K. and Gleason, B., "Considering MEEF in inverse lithography technology (ILT) and source mask optimization (SMO)", Photomask Technology 2008, Proc. of SPIE Vol. 7122 (2008).
4. Kim B.G., Suh S.S., Kim B.S., Tolani V., Dai G., Irby D., Wang K., Xiao G., Kim D., Baik K., Gleason G., "Tradeoff between Inverse Lithography Mask Complexity and Lithographic Performance", Proc. of SPIE Vol. 7379 (2009).
5. Kim B.G., Suh, S.S., Woo S.G., Cho H.K., Xiao G., Son D., Irby D., Kim D., Baik K., "Inverse lithography (ILT) mask manufacturability for full-chip Device", Photomask Technology 2009, Proc. of SPIE Vol. 7488 (2009).