Inverse lithography (ILT) mask manufacturability for full-chip device

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7488, Issue , 2009, Pages

  Kim, Byung Gook ^a   Suh, Sung Soo ^a   Woo, Sang Gyun ^a   Cho, HanKu ^a   Xiao, Guangming ^b   Son, Dong Hwan ^b   Irby, Dave ^b   Kim, David ^b   Baik, Ki Ho ^b  

^a SAMSUNG Electronics   (South Korea)

^b Luminescent Technologies Inc   (United States)

Author keywords

Inverse lithography technology (ILT); Lithography simulation; Resolution enhancement technology (RET); Sub resolution assist feature (SRAF)

Indexed keywords

CHIP-LEVEL; CLIP LEVEL; INVERSE LITHOGRAPHY; INVERSE LITHOGRAPHY TECHNOLOGY (ILT); LITHOGRAPHY SIMULATION; LOW K1 LITHOGRAPHY; MANUFACTURABILITY; MASK DATA; MASK PATTERNS; RESOLUTION ENHANCEMENT TECHNOLOGY (RET); SUB-RESOLUTION ASSIST FEATURE;

FRACTURING (OIL WELLS); MANUFACTURE; PHOTOMASKS; TECHNOLOGY;

LITHOGRAPHY;

EID: 79959350656     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.833572     Document Type: Conference Paper

References (4)

1. Kim B.G., Suh S.S., Kim B.S., Tolani V., Dai G., Irby D., Wang K., Xiao G., Kim D., Baik K., Gleason G., "Tradeoff between Inverse Lithography Mask Complexity and Lithographic Performance", Proc. of SPIE Vol. ###-###, (2009)
2. Abrams, S. and Pang, L., "Fast inverse lithography technology", 31st International Symposium of Microlithography, Proc. SPIE 6154 (2006)
3. Pang, L., et al, "Inverse Lithography Technology (ILT): Keep the balance between SRAF and MRC at 45 and 32nm", Proc. SPIE 6730, (2007)
4. Pang, L., Xiao, G., Tolani, V., Hu, P., Cecil, T., Dam T., Baik K. and Gleason, B., "Considering MEEF in inverse lithography technology (ILT) and source mask optimization (SMO)", Photomask Technology 2008, Proc. Vol. 7122 (2008)