Study on the correlation between dielectric constant and chemical shift in FTIR spectra of SiOC film by chemical vapor deposition after annealing

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 2, 2010, Pages 448-451

  Oh, Teresa ^a  

^a Department of Semiconductor Engineering   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

C-H BOND; CARBON CONTENT; CROSSLINKS; DIELECTRIC CONSTANTS; FT-IR SPECTRUM; INDUCTIVELY COUPLED PLASMA CHEMICAL VAPOR DEPOSITION; IONIC SITES; OXYGEN ATOM; RED SHIFT; SI-O-C BOND; SIOC FILM; SPACE EFFECTS; VIBRATION MODES;

CHEMICAL SHIFT; CHEMICAL VAPOR DEPOSITION; DISSOCIATION; ELECTROMAGNETIC INDUCTION; INDUCTIVELY COUPLED PLASMA; NANOSCIENCE; OXYGEN; PERMITTIVITY; PLASMA DEPOSITION;

SILICON;

EID: 77954339919     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982437     Document Type: Conference Paper

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