Mechanism of chemical mechanical planarization induced edge corrosion of copper line for Cu/Low-k SiOC interconnects

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 2, 2007, Pages 530-535

  Hsu, Yung Lung ^a   Fang, Yean Kuen ^a   Chiang, Yen Ting ^a   Chou, Tse Heng ^a   Hong, Franklin Chau Nan ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

CMP; Contact angle; Corrosion; H2O2; Hydrophobic; Low k SiOC

Indexed keywords

CONTACT ANGLE; CORROSION; HYDROPHOBICITY; SCANNING ELECTRON MICROSCOPY; SURFACE TENSION;

CHEMICAL MECHANICAL PLANARIZATION (CMP) PROCESS;

CMOS INTEGRATED CIRCUITS;

EID: 34547880458     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.530     Document Type: Article

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