Effect of tellurium doping on the structural, optical, and electrical properties of CdO

Solar Energy

Volumn 84, Issue 8, 2010, Pages 1433-1438

  Dakhel, A A ^a  

^a UNIVERSITY OF BAHRAIN   (Bahrain)

Author keywords

Cadmium tellurium oxide; Degenerate semiconductors; Oxides; TCO; Te doped CdO

Indexed keywords

BAND GAPS; BANDGAP SHRINKAGE; CDO FILMS; CLASSICAL DRUDE THEORY; CRYSTALLINE STRUCTURE; DEGENERATE SEMICONDUCTORS; ELECTRICAL MEASUREMENT; ELECTRICAL PROPERTY; EXPERIMENTAL DATA; OPTICAL AND ELECTRICAL PROPERTIES; SPECTRAL REGION; TCO; TELLURIUM OXIDE; TRAP LEVELS; UV-VIS-NIR ABSORPTION; VACUUM EVAPORATION METHOD; WAFER SUBSTRATES; X RAY FLUORESCENCE;

ABSORPTION; ABSORPTION SPECTROSCOPY; CADMIUM; CARRIER CONCENTRATION; ELECTRIC PROPERTIES; ELECTRON MOBILITY; ENERGY GAP; FILM PREPARATION; INFRARED DEVICES; OPTICAL PROPERTIES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON WAFERS; TELLURIUM; VACUUM EVAPORATION; X RAY DIFFRACTION;

CADMIUM COMPOUNDS;

CADMIUM; EVAPORATION; EXPERIMENTAL STUDY; FILM; OXIDE; TELLURIUM; X-RAY DIFFRACTION; X-RAY FLUORESCENCE;

EID: 77954309325     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2010.05.003     Document Type: Article

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