AlInN HEMT grown on SiC by metalorganic vapor phase epitaxy for millimeter-wave applications

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 6, 2010, Pages 1348-1352

  Guo, Shiping ^a   Gao, Xiang ^a   Gorka, Daniel ^a   Chung, Jinwoork W ^b   Wang, Han ^b   Palacios, Tomas ^b   Crespo, Antonio ^c   Gillespie, James K ^c   Chabak, Kelson ^c   Trejo, Manuel ^c   Miller, Virginia ^c   Bellot, Mark ^c   Via, Glen ^c   Kossler, Mauricio ^c   Smith, Howard ^c,d   Tomich, David ^c  

^a IQE INC   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

^d UNIVERSITY OF DAYTON   (United States)

Author keywords

2DEG; AlInN; Heterojunction; High mobility electron transistor; Movpe

Indexed keywords

BACKGROUND LEVEL; CONTACT LESS; DC CHARACTERISTICS; GATE LENGTH; HALL TEST; HIGH MOBILITY; HIGH QUALITY; HIGH-MOBILITY ELECTRONS; MAXIMUM DRAIN CURRENT; MAXIMUM TRANSCONDUCTANCE; METAL-ORGANIC VAPOR PHASE EPITAXY; MILLIMETER-WAVE APPLICATIONS; MOVPE; SHEET CHARGE DENSITY; STANDARD DEVIATION;

CAPACITANCE MEASUREMENT; CRYSTAL GROWTH; DRAIN CURRENT; FREQUENCY RESPONSE; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; VAPORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77954308507     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200983621     Document Type: Article

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