Thermal resistance measurement of LED package with multichips

IEEE Transactions on Components and Packaging Technologies

Volumn 30, Issue 4, 2007, Pages 632-636

  Kim, Lan ^a   Shin, Moo Whan ^a  

^a Myong Ji University   (South Korea)

Author keywords

Gallium compounds; GaN based light emitting diode (LED); Junction temperature; Light emitting diodes; Multichip; Packaging; Temperature; Thermal resistance

Indexed keywords

ELECTRONICS PACKAGING; HEAT LOSSES; HEAT RESISTANCE; MULTICHIP MODULES; SEMICONDUCTING GALLIUM COMPOUNDS;

JUNCTION TEMPERATURE; THERMAL RESISTANCE MEASUREMENT; THERMAL TRANSIENT MEASUREMENT;

LIGHT EMITTING DIODES;

EID: 36849028570     PISSN: 15213331     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCAPT.2007.906332     Document Type: Conference Paper

References (12)

1. N. Holonyak Jr. and S. F. Bevaqua, "Coherent (visible) light emission from Ga(Asl-xPx) junctions," Appl. Phys. Lett., vol. 1, no. 4, pp. 82-83, 1962.
2. C. P. Kuo, R. M. Fletcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, and V. M. Robbins, "High performance AlGaInP visible light - Emitting diodes," Appl. Phys. Lett., vol. 57, no. 27, pp. 2937-2939, 1990.
3. F. M. Steranka et al., "High power LEDs - Technology status and market applications," Phys. Stat. Sol., vol. 194, no. 2, pp. 380-388, 2002.
4. T. Mukai, D. Morita, and S. Nakamura, "High-power UV InGaN/AlGaN double-heterostructure LEDs," J. Crystal Growth, vol. 189/190, pp. 778-781, 1998.
5. N. Narendran and L. Deng, "Performance charateristcs of light emitting diodes," in Proc. IESNA Annu. Conf., New York, 2002, pp. 157-164.
6. J. Park, M. Shin, and C. C. Lee, "Measurement of temperature profiles on visible light-emitting diodes by use of a nematic liquid crystal and an infrared laser," Opt. Lett., vol. 29, no. 22, pp. 2656-2658, 2004.
7. S. L. Chuang, "Kinetic model for degradation of light-emitting diodes," IEEE J. Quant. Electron., vol. 33, no. 6, pp. 970-979, Jun. 1997.
8. R. V. Steele, "High-brightness LED market overview," Proc. SPIE, vol. 4445, pp. 1-4, 2001.
9. D. Eissler, S. Illek, and G. Bogner, "LED technology trends," in Proc. Int. Conf. Compound Semicond. Manufact. Technol., 2005, [CD ROM].
10. W. J. Hwang, P. Szabó, G. Farkas, and M. W. Shin, "Application of structure functions for the transient thermal analysis of GaN-based LEDs with SiC and sapphire substrates," in Proc. 10th THERMINIC Workshop Sophia Antipolis, France, Sep. 2004, pp. 91-94.
11. V. Székely and T. Van Bien, "Fine structure of heat flow path in semi-conductor devices: A measurement and identification method," Solid-State Electron., vol. 31, no. 9, pp. 1363-1368, 1988.
12. V. Székely, "On the representation of infinite-length distributed RC one-ports," IEEE Trans. Circuits Syst., vol. 38, no. 7, pp. 711-719, Jul. 1991.