Graphene on SiC(0001) and SiC(0001{combining overline}) surfaces grown via Ni-silicidation reactions

Surface Science

Volumn 604, Issue 17-18, 2010, Pages 1509-1515

  Yoneda, T ^a   Shibuya, M ^b   Mitsuhara, K ^b   Visikovskiy, A ^b   Hoshino, Y ^c   Kido, Y ^b  

^a FUKUI NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b RITSUMEIKAN UNIVERSITY   (Japan)

^c KANAGAWA UNIVERSITY   (Japan)

Author keywords

Band dispersion; Graphene; Medium energy ion scattering; Photoelectron spectroscopy; SiC(0001); SiC(0001 combining overline ); Work function

Indexed keywords

AB INITIO CALCULATIONS; BAND DISPERSION; BAND DISPERSIONS; DISPERSION CURVES; DOUBLE LAYERS; GRAPHITE LAYERS; HIGH RESOLUTION; ION SCATTERING; MEDIUM ENERGY ION SCATTERING; MIXED PHASE; NI-SILICIDE; SILICIDATION; SINGLE LAYER; THEORETICAL PREDICTION;

DISPERSIONS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONIC PROPERTIES; ELECTRONIC STATES; GRAPHENE; GRAPHITE; IONS; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTOIONIZATION; PHOTONS; PLASMA INTERACTIONS; SCATTERING; SILICIDES; WORK FUNCTION;

SILICON CARBIDE;

EID: 77953873271     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2010.05.019     Document Type: Article

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