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Volumn 69, Issue 15, 2004, Pages

Ultrathin Ni layers grown epitaxially on SiC(0001) at room temperature

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; NICKEL; SILICON DERIVATIVE;

EID: 42749106618     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.155303     Document Type: Article
Times cited : (7)

References (18)
  • 10
    • 0010409450 scopus 로고    scopus 로고
    • edited by E. F. Schubert (Cambridge University Press, Cambridge)
    • H.-J. Gossmann, in Delta-Doping of Semiconductors, edited by E. F. Schubert (Cambridge University Press, Cambridge, 1996), p. 161.
    • (1996) Delta-Doping of Semiconductors , pp. 161
    • Gossmann, H.-J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.