Optimal 2DEG density for plasmon-assisted ultrafast decay of hot phonons

AIP Conference Proceedings

Volumn 1129, Issue , 2009, Pages 245-248

  Sermuksnis E ^a   Liberis, J ^a   Matulionis, A ^a  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

GaN based channels; High electric field; Hot phonons; Microwave noise; Two dimensional electron gas

Indexed keywords

EID: 67650482284     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.3140442     Document Type: Conference Paper

References (10)

1. M. Wraback, H. Shen, J. C. Carrano, C. J. Collins, J. C. Campbell, R. D. Dupuis, M. J. Schurman and 1, T, Ferguson, Appl, Phys, Lett, 79, 1303-1305 (2001).
2. A, Matulionis, Phys, Status SoUdi A 203, 2313-2325 (2006).
3. K, T, Tsen, J, G, Kiang, D, K, Ferry and H, Morko?, Appl, Phys, Lett, 89, 112111-1-3 (2006),
4. A, Dyson and B, K, Ridley, J, Appl, Phys, 103,114507-1-4 (2008),
5. A, Matulionis, J, Liberis, 1, Matulionienė, M, Ramonas, L, F, Eastman, J, R, Shealy, V, Tilak and A, Vertiatchikh, Phys, Rev, B 68, 035338-1-7 (2003).
6. Z, Wang, K, Reimann, M, Woerner, T, Elsaesser, D, Hofstetter, J, Hwang, W, J, Schaff and L, F, Eastman, Phys, Rev, Lett., 94, 037403-1-4 (2005).
7. E, Šermukšnis, J, Liberis and A, MatuUonis, Lithuanian J, Phys, 47, 491-498 (2007).
8. A, Matulionis, J, Liberis, E, Šermukšnis, J, Xie, J, H, Leach, M, Wu and H, Morkoç, Semicond, Sci, Technol, 23, 075048-1-6 (2008).
9. A, Matulionis, J, Liberis, L, Ardaravičius, L, F, Eastman, J, R, Shealy and A, Vertiatchikh, Semicond, Sci, Technol, 19, S421-S423 (2004).
10. A, Matulionis and I., Matulionienė, "Accumulation of hot phonons in GaN and related structures" in Gallium Nitride Materials and Devices II, edited by H, Morkoç and C, W, Litton, Proc SPIE 6473P-1-15, 2007.