Detection of CO2 in solution with a Pt-NiO solid-state sensor

Journal of Colloid and Interface Science

Volumn 348, Issue 1, 2010, Pages 227-231

  Yue, Zhao ^a   Niu, Wencheng ^a   Zhang, Wei ^a   Liu, Guohua ^a   Parak, Wolfgang J ^b  

^a NANKAI UNIVERSITY   (China)

^b PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

MISFET; Pt NiO thin films; Solution based CO2 sensor

Indexed keywords

ACTIVE SENSING; ALL-SOLID-STATE; AQUEOUS SOLUTIONS; CONCENTRATION OF; GATE ELECTRODES; LINEAR RESPONSE; METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MISFET; NIO THIN FILM; PT-NIO THIN FILMS; RESPONSE CURVES; ROOM TEMPERATURE; TRANSIENT CHARACTERISTIC;

ALGEBRA; DISSOLUTION; DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; METAL INSULATOR BOUNDARIES; MIS DEVICES; MISFET DEVICES; SOLID-STATE SENSORS; THIN FILMS; VAPOR DEPOSITION;

PLATINUM;

CARBON DIOXIDE; NICKEL;

AQUEOUS SOLUTION; ARTICLE; FIELD EFFECT TRANSISTOR; NIPAH VIRUS; PRIORITY JOURNAL; SENSOR; SOLID STATE;

EID: 77953619911     PISSN: 00219797     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcis.2010.04.020     Document Type: Article

References (45)

1. Carroll J.J., Mather A.E. J. Solution Chem. 1992, 21:607.
2. Hayashi H., Ogo S., Abura T., Fukuzumi S. J. Am. Chem. Soc. 2003, 125:14266.
3. Wiegran K., Trapp T., Cammann K. Sens. Actuators B 1999, 57:120.
4. Chu C.S., Lo Y.L. Sens. Actuators B 2009, 143:205.
5. T. Manuccia, J. Eden, US Patent, vol. 4509522, 1985.
6. Lau K., Guo W., Kiernan B., Slater C., Diamond D. Sens. Actuators B 2009, 136:242.
7. Nivens D., Schiza M., Angel S. Talanta 2002, 58:543.
8. Neurauter G., Klimant I., Wolfbeis O. Anal. Chim. Acta 1999, 382:67.
9. Burke C., Markey A., Nooney R., Byrne P., McDonagh C. Sens. Actuators B 2006, 119:288.
10. Severinghaus J.W., Bradley A.F. J. Appl. Physiol. 1958, 13:515.
11. Han J., Cui D., Li Y., Cai J., Dong Z., Zhang H., Shi C. Sens. Actuators B 1995, 24:156.
12. Shin J., Lee H., Kim C., Oh B., Rho K., Nam H., Cha G. Anal. Chem. 1996, 68:3166.
13. Sekiguchi T., Nagai Y., Makino T., Ohno K., Nakamura M., Hosaka H., Sakio H., Ohtsu S., Takahashi H. Sens. Actuators B 1998, 49:171.
14. Beyenal H., Davis C., Lewandowski Z. Sens. Actuators B 2004, 97:202.
15. Fasching R., Keplinger F., Hanreich G., Jobst G., Urban G., Kohl F., Chabicovsky R. Sens. Actuators B 2001, 78:291.
16. Shimizu Y., Yamashita N. Sens. Actuators B 2000, 64:102.
17. Jiménez-Cadena G., Riu J., Rius F.X. Analyst 2007, 132:1083.
18. Pearton S., Ren F., Wang Y., Chu B., Chen K., Chang C., Lim W., Lin J., Norton D. Prog. Mater. Sci. 2010, 55:1.
19. Ostrick B., Mühlsteff J., Fleischer M., Meixner H., Doll T., Kohl C.-D. Sens. Actuators B 1999, 57:115.
20. Ostrick B., Fleischer M., Meixner H., Kohl C.-D. Sens. Actuators B 2000, 68:197.
21. Ostrick B., Fleischer M., Meixner H. Sens. Actuators B 2003, 95:271.
22. Obata K., Shimanoe K., Miura N., Yamazoe N. Sens. Actuators B 2003, 93:243.
23. Obata K., Shimanoe K., Miura N., Yamazoe N. Electrochemistry 2003, 71:496.
24. Shimanoe K., Goto K., Obata K., Nakata S., Sakai G., Yamazoe N. Sens. Actuators B 2004, 102:14.
25. Hotovy I., Rehacek V., Siciliano P., Capone S., Spiess L. Thin Solid Films 2002, 418:9.
26. Bögner M., Fuchs A., Scharnagl K., Winter R., Doll T., Eisele I. Sens. Actuators B 1998, 47:145.
27. Fergus J. Sens. Actuators B 2008, 134:1034.
28. Marsal A., Cornet A., Morante J.R. Sens. Actuators B 2003, 94:324.
29. Alegret S., Bartrolí J., Jiménez C., Valle M.d., Domínguez C., Cabruja E., Merlos A. Electroanalysis 1991, 3:355.
30. Wu C.-L., Chou J.-C., Chung W.-Y., Sun T.-P., Hsiung S.-K. Mater. Chem. Phys. 2000, 63:153.
31. Bergveld P. Sens. Actuators B 2003, 88:1.
32. Švancara I., VytrHas K., Barek J., Zima J. Crit. Rev. Anal. Chem. 2001, 31:311.
33. Na X., Niu W., Li H., Xie J. Sens. Actuators B 2002, 87:222.
34. Hendrikse J., Olthuis W., Bergveld P. Sens. Actuators B 1998, 47:1.
35. Abe H., Esashi M., Matsuo T. IEEE Trans. Electron. Devices 1979, 26:1939.
36. Gordon D., Lambert R. Surf. Sci. 1993, 287:114.
37. Bogen S., Hoinkes H., Poehlmann E., Wilsch H. Vacuum 1990, 41:96.
38. Özkan G., Özçelik E. J. Power Sources 2005, 140:28.
39. Pan T., Lin J., Wu M., Lai C. Sens. Actuators B 2009, 138:619.
40. Ito Y. Sens. Actuators B 2000, 64:152.
41. Cane C., Gracia I., Merlos A. Microelectron. J. 1997, 28:389.
42. Poghossian A., Schoening M.J. Electroanalysis 2004, 16:1863.
43. Hafeman D., Parce J., McConnell H. Science 1988, 240:1182.
44. Parak W., Hofmann U., Gaub H., Owicki J. Sens. Actuators A 1997, 63:47.
45. Kloock J.P., Moreno L., Bratov A., Huachupoma S., Xu J., Wagner T., Yoshinobu T., Ermolenko Y., Vlasov Y.G., Schöning M.J. Sens. Actuators B 2006, 118:149.