PLD-prepared cadmium sensors based on chalcogenide glasses-ISFET, LAPS and μISE semiconductor structures

Sensors and Actuators, B: Chemical

Volumn 118, Issue 1-2, 2006, Pages 149-155

  Kloock, J P ^a,b   Moreno, L ^c   Bratov, A ^c   Huachupoma, S ^a,b   Xu, J ^a,b   Wagner, T ^a,b   Yoshinobu, T ^d   Ermolenko, Y ^e   Vlasov, Y G ^e   Schoning M J ^a,b  

^a AACHEN UNIVERSITY OF APPLIED SCIENCES   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^d TOHOKU UNIVERSITY   (Japan)

^e ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

Author keywords

ISE; Chalcogenide glasses; Heavy metal detection; ISFET; LAPS; Pulsed laser deposition

Indexed keywords

CADMIUM; FIELD EFFECT TRANSISTORS; ION SELECTIVE ELECTRODES; PULSED LASER DEPOSITION; THIN FILMS; TRANSDUCERS;

CHALCOGENIDE GLASSES; HEAVY METAL DETECTION; ION-SELECTIVE FIELD-EFFECT TRANSISTORS (ISFET); LIGHT-ADDRESSABLE POTENTIOMETRIC SENSORS (LAPS);

CHEMICAL SENSORS;

EID: 33747825386     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2006.04.018     Document Type: Article

References (20)

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