Actinic imaging of native and programmed defects on a full-field mask

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7636, Issue , 2010, Pages

  Mochi, I ^a   Goldberg, K A ^a   La Fontaine, B ^b   Tchikoulaeva, A ^b   Holfeld, C ^c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b IBM MICROELECTRONICS   (United States)

^c GLOBALFOUNDRIES Dresden Module One LLC and Co KG   (Germany)

Author keywords

actinic; defects; EUV; extreme ultraviolet; lithography; Mask inspection; microscopy

Indexed keywords

13.4 NM; ACTINIC INSPECTION; DEEP ULTRAVIOLET INSPECTION TOOLS; DEFECT IMAGES; DETECTABILITY; EXTREME ULTRAVIOLET LITHOGRAPHY MASKS; EXTREME ULTRAVIOLET MASKS; FULL-FIELD; MASK DEFECTS; MULTI-LAYER-COATING; NATIVE DEFECT; PROGRAMMED DEFECT; SEM; SEMATECH; TOP SURFACE; WAFER IMAGES; WAFER INSPECTION;

INSPECTION; INSPECTION EQUIPMENT; LITHOGRAPHY; MACHINE TOOLS; SURFACE DEFECTS;

SCANNING ELECTRON MICROSCOPY;

EID: 77953468184     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.846670     Document Type: Conference Paper

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