Measuring resist-induced contrast loss using EUV interference lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7636, Issue , 2010, Pages

  Langner, Andreas ^a   Solak, Harun H ^a,b   Gronheid, Roel ^c   Van Setten, Eelco ^d   Auzelyte, Vaida ^a   Ekinci, Yasin ^a,e   Van Ingen Schenau, Koen ^d   Feenstra, Kees ^d  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

^b EULITHA AG   (Switzerland)

^c IMEC   (Belgium)

^d ASML   (Netherlands)

^e ETH ZURICH   (Switzerland)

Author keywords

EUV; interference lithography; resist contrast loss

Indexed keywords

AERIAL IMAGES; BEAM LINES; CHEMICAL PROCESS; CONTRAST LOSS; EXPERIMENTAL EVALUATION; EXPERIMENTAL METHODS; EXPOSURE TOOL; INTERFERENCE LITHOGRAPHY; PAUL SCHERRER INSTITUTE; RESIST PATTERN;

CHEMICAL STABILITY; EXPOSURE METERS; FUZZY CONTROL; MECHANICAL STABILITY; PHOTORESISTS;

ELECTRON BEAM LITHOGRAPHY;

EID: 77953371514     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.846495     Document Type: Conference Paper

References (8)

1. K. van Ingen Schenau, S. Hansen, B. Pierson and J. van Schoot. Proc. SPIE 6923 (1), 692314 (2008).
2. H. H. Solak. J. Phys. D: Appl. Phys. 39 (10), R171-R188 (2006).
3. V. Auzelyte, C. Dais, P. Farquet, D. Grützmacher, L. J. Heyderman, F. Luo, S. Olliges, C. Padeste, P. K. Sahoo, T. Thomson, A. Turchanin, C. David and H. H. Solak. J. Micro/Nanolith. MEMS MOEMS 8 (2), 021204 (2009).
4. D. V. Steenwinckel, J. H. Lammers, L. H. A. Leunissen and J. A. J. M. Kwinten. Proc. SPIE 5753 (1), 269-280 (2005).
5. D. V. Steenwinckel, R. Gronheid, F. V. Roey, P. Willems and J. H. Lammers. J. Micro/Nanolith. MEMS MOEMS 7 (2), 023002 (2008).
6. Purchased from National Center for Scientific Research, Athens, Greece.
7. J. K. W. Yang and K. K. Berggren, J. Vac. Sci. Technol. B 25 (6), 2025-2029 (2007).
8. T. Itani and J. J. Santillan. J. Vac. Sci. Technol. B 27 (6), 2986-2989 (2009).