Wide-bandgap CuIn1-xAlxSe2 thin films deposited on transparent conducting oxides

Solar Energy Materials and Solar Cells

Volumn 94, Issue 7, 2010, Pages 1263-1269

  Lopez Garcia J ^a   Maffiotte, C ^a   Guillen C ^a  

^a CIEMAT   (Spain)

Author keywords

Chalcopyrite; CIS; Cu(InAl)Se2; Evaporation; Selenization; TCO

Indexed keywords

BAND GAP ENERGY; BAND GAPS; CHALCOPYRITE STRUCTURES; CIS; COATED GLASS SUBSTRATES; COMPOSITION ANALYSIS; GLASS SUBSTRATES; HIGH EFFICIENCY; LOW COSTS; METALLIC PRECURSOR; POLYCRYSTALLINE; SELENIZATION; SEMI-TRANSPARENT PHOTOVOLTAIC; TANDEM CELLS; TIN DOPED INDIUM OXIDE; TRANSPARENT CONDUCTING OXIDE; TWO-STAGE PROCESS; WIDE BAND GAP; WIDE BANDGAP MATERIALS; X-RAY DIFFRACTOGRAMS;

ALUMINUM; CONDUCTIVE FILMS; COPPER COMPOUNDS; ENERGY GAP; EVAPORATION; INDIUM COMPOUNDS; OXIDE FILMS; SEMICONDUCTING SELENIUM COMPOUNDS; SUBSTRATES; THIN FILMS; TIN; TITANIUM COMPOUNDS; VAPOR DEPOSITION; ZINC; ZINC OXIDE;

ITO GLASS;

EID: 77953287670     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.03.022     Document Type: Article

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