SCOPUS 정보 검색 플랫폼

Microelectronics Reliability

Volumn 50, Issue 5, 2010, Pages 643-646

Low power resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte

(2) Rahaman, S Z a Maikap, S a

a CHANG GUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLIANCE CURRENT; DEVICE SIZES; LOW POWER; LOW-RESISTANCE STATE; MEMORY DEVICE; METALLIC FILAMENTS; PROGRAMMING CURRENTS; RESISTANCE RATIO; RESISTIVE SWITCHING MEMORIES; RETENTION TIME;

GERMANIUM; SWITCHING SYSTEMS;

FILAMENTS (LAMP);

EID: 77953130039 PISSN: 00262714 EISSN: None Source Type: Journal
DOI: 10.1016/j.microrel.2010.01.022 Document Type: Article

Times cited : (14)

References (10)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.