Fabrication of p-CuGaS2/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods

Journal of Physics and Chemistry of Solids

Volumn 66, Issue 11, 2005, Pages 1868-1871

  Chichibu, Shigefusa F ^a,b,c   Ohmori, Takuya ^a   Shibata, Naoyuki ^a   Koyama, Takahiro ^a   Onuma, Takeyoshi ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

A. Metalorganic vapor phase epitaxy (MOVPE); A. Semiconductors; B. Chalcopyrites compounds; B. Light emitting diodes; B. Semiconducting ternary compounds

Indexed keywords

ALUMINUM; COPPER COMPOUNDS; DEPOSITION; ELECTROLUMINESCENCE; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SEMICONDUCTOR MATERIALS; SPUTTERING; THIN FILMS; ZINC OXIDE;

BAND GAP; CHALCOPYRITES COMPOUNDS; EPILAYERS; SEMICONDUCTING TERNARY COMPOUNDS;

LIGHT EMITTING DIODES;

EID: 29144497281     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2005.09.007     Document Type: Conference Paper

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