Efficiency improvement of GaN-based LEDs with a SiO2 nanorod array and a patterned sapphire substrate

IEEE Electron Device Letters

Volumn 31, Issue 6, 2010, Pages 582-584

  Huang, H W ^a   Huang, J K ^a   Lin, C H ^b   Lee, K Y ^b   Hsu, H W ^b   Yu, C C ^b   Kuo, H C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Unilite Corporation   (Taiwan)

Author keywords

Gallium nitride (GaN); Light emitting diodes (LEDs); Nanoimprint lithography (NIL); Patterned sapphire substrate (PSS)

Indexed keywords

DRIVING CURRENT; EFFICIENCY IMPROVEMENT; EPITAXIAL QUALITY; GAN BASED LED; GAN-BASED LIGHT-EMITTING DIODES; LIGHT EMITTING DEVICES; LIGHT EXTRACTION; LIGHT OUTPUT; NANOROD ARRAYS; OUTPUT POWER; PATTERNED SAPPHIRE SUBSTRATE; PATTERNED SAPPHIRE SUBSTRATE (PSS);

CRYSTAL STRUCTURE; DIODES; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; NANOIMPRINT LITHOGRAPHY; NANORODS; SAPPHIRE; SILICON COMPOUNDS; SUBSTRATES;

GALLIUM ALLOYS;

EID: 77953021250     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2045472     Document Type: Article

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