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Applied Physics Letters

Volumn 96, Issue 19, 2010, Pages

Dielectric constants of atomically thin silicon channels with double gate

(2) Kageshima, Hiroyuki a Fujiwara, Akira a

a NTT Basic Research Laboratories (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARTIFICIAL CONTROL; BI-LAYER; CHANNEL SURFACE; CONDUCTION TYPE; DIELECTRIC CONSTANTS; DOUBLE GATE; FIRST-PRINCIPLES CALCULATION; NANO FILMS; SEMICONDUCTOR NANOSTRUCTURES; SI (1 1 1); SILICON CHANNEL;

MAGNETIC FILMS;

PERMITTIVITY;

EID: 77953017389 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3427364 Document Type: Article

Times cited : (8)

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