Modeling of boron and phosphorus implantation into (100) germanium

IEEE Transactions on Electron Devices

Volumn 52, Issue 1, 2005, Pages 91-98

  Suh, Y S ^a   Carroll, M S ^b,c   Levy, R A ^a   Sahiner, M A ^d,e   Bisognin, G ^f   King, C A ^b,g  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b AGERE SYSTEMS   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d Evans East   (United States)

^e SETON HALL UNIVERSITY   (United States)

^f UNIVERSITY OF PADOVA   (Italy)

^g Noble Device Technologies   (United States)

Author keywords

Boron; Germanium; Ion implantation; Pearson distribution; Phosphorus

Indexed keywords

COMPUTER SIMULATION; ELECTRON MOBILITY; ION IMPLANTATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; PHOSPHORUS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SILICON WAFERS; SUBSTRATES;

NUCLEAR REACTION ANALYSIS; PEARSON DISTRIBUTION;

SEMICONDUCTING GERMANIUM;

EID: 12344251985     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.841340     Document Type: Article

References (17)

1. J. Oh, S. Csutak, and J. C. Campbell, "High-speed interdigitated Ge PIN photodetectors," IEEE Photon. Technol. Lett., vol. 14, no. 3, pp. 369-371, Mar. 2002.
2. C. O. Chui, H. Kim, D. Chi, B. B. Triplett, P. C. McIntyre, and K. C. Saraswat, "A sub-400 °C germanium MOSFET technology with high-κ dielectric and metal gate," in IEDM Tech. Dig., 2002, pp. 437-440.
3. H. Shang, H. Okorn-Schmidt, K. K. Chan, M. Copel, J. A. Ott, P. M. Kozlowski, S. E. Steen, S. A. Cordes, H.-S. P. Wong, E. C. Jones, and W. E. Haensch, "High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric," in IEDM Tech. Dig., 2002, pp. 441-444.
4. R. E. Jones, S. G. Thomas, S. Bharatan, R. Thoma, C. Jasper, T. Zirkle, N. V. Edwards, R. Liu, X. D. Wang, Q. Xie, C. Rosenblad, J. Ramm, G. Isella, H. von Känel, J. Oh, and J. C. Campbell, "Fabrication and modeling of gigahertz photodetectors in heteroepitaxial Ge-on-Si using a graded buffer layer deposited by low energy plasma enhanced CVD," in IEDM Tech. Dig., 2002, pp. 793-796.
5. G. Masini, L. Colace, and G. Assanto, "Si based optoelectronics for communications," Mater. Sci. Eng., vol. B89, pp. 2-9, 2002.
6. S. Uppal, A. F. W. Willoughby, J. M. Bonar, A. G. R. Evans, N. E. B. Cowern, R. Morris, and M. G. Dowsett, "Diffusion of ion-implanted boron in germanium," J. Appl. Phys., vol. 90, pp. 4293-4295, 2001.
7. K. S. Jones and E. E. Haller, "Ion implantation of boron in germanium," J. Appl. Phys., vol. 61, pp. 2469-2477, 1987.
8. C. O. Chui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, "Activation and diffusion studies of ion-implanted p and n dopants in germanium,"Appl. Phys. Lett., vol. 83, pp. 3275-3277, 2003.
9. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids. New York: Pergamon, 1985, vol. 1.
10. A. K. Sutton and Z. Zhou, "Simulation of Georgia techs CMOS baseline using T-SUPREM4 and MEDICI," in Proc. 14th Biennial University/Government/Industry Microelectronics Symp., Piscataway, NJ, 2001, pp. 179-185.
11. R. G. Wilson, F. A. Stevie, and C. W. Magee, Secondary Ion Mass Spectrometry. New York: Wiley, 1989, ch. 3.
12. Y. S. Suh, R. A. Levy, M. S. Carroll, and A. Sahiner. Phosphorus and boron implantation into (100) germanium, presented at Proc. Mater. Res. Soc. Symp. [Online]. Available: http://www.mrs.org/publications/epubs/proceedings/spring2004/b/index.html
13. S. Prussin, D. I. Margolese, and R. N. Tauber, "Formation of amorphous layers by ion implantation," J. Appl. Phys., vol. 57, pp. 180-185, 1985.
14. D. G. Ashworth, R. Oven, and B. Mundin, "Representation of ion implantation profiles by Pearson frequency distribution curves," J. Phys. D, Appl. Phys., vol. 23, pp. 870-876, 1990.
15. J. Lindhard and M. Scharff, "Energy dissipation by ions in the keV region," Phys. Rev., vol. 124, pp. 128-130, 1961.
16. M. D. Giles, VLSI Technology, 2nd ed, S. M. Sze, Ed. New York: Mc-Graw-Hill, 1988, pp. 327-374.
17. K. B. Winterbon, "Pearson distributions for ion ranges," Appl. Phys. Lett., vol. 42, pp. 205-206, 1983.