Epitaxial phase change materials: Growth and switching of Ge 2Sb2Te5 on GaSb(001)

Materials Research Society Symposium Proceedings

Volumn 1160, Issue , 2009, Pages 177-183

  Braun, Wolfgang ^a   Shayduk, Roman ^a   Flissikowski, Timur ^a   Grahn, Holger T ^a   Riechert, Henning ^a   Fons, Paul ^b   Kolobov, Alex ^b  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY COMPOUNDS; GALLIUM COMPOUNDS; GERMANIUM COMPOUNDS; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; TELLURIUM COMPOUNDS;

AMORPHOUS PHASIS; CUBIC STRUCTURE; EPITAXIAL ORIENTATIONS; GE2SB2TE5; SHARP INTERFACE; SHORT LASER PULSE; VOID FORMATION;

PHASE CHANGE MATERIALS;

EID: 77649127540     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1160-h14-05     Document Type: Conference Paper

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