Enhanced normal-incident absorption of quantum-dot infrared photodetectors with smaller quantum dots

IEEE Photonics Technology Letters

Volumn 20, Issue 14, 2008, Pages 1240-1242

  Tseng, Chi Che ^a   Chou, Shu Ting ^b   Chen, Yi Hao ^a   Chen, Cheng Nan ^a   Lin, Wei Hsun ^a   Chung, Tung Hsun ^a   Lin, Shih Yen ^c   Chiu, Pei Chin ^d   Chyi, Jen Inn ^d   Wu, Meng Chyi ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b RESEARCH CENTER FOR APPLIED SCIENCES   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Quantum dot (QD); Quantum dot infrared photodetector (QDIP)

Indexed keywords

DETECTION WAVELENGTHS; ENERGY DIFFERENCES; GAAS; INAS; INFRARED PHOTODETECTOR; QUANTUM DOT; QUANTUM DOTS; QUANTUM-DOT INFRARED PHOTODETECTORS; UNIFORM SIZE; ZERO-DIMENSIONAL;

ABSORPTION; ADATOMS; INDIUM; INFRARED DETECTORS; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; PHOTODETECTORS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 70349656737     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.926020     Document Type: Article

References (13)

1. [1] S. Y. Lin, Y. R. Tsai, and S. C. Lee, "High-performance InAs/GaAs quantum-dot infrared photodetector with single-sided Al Ga as blocking layer," Appl. Phys. Lett., vol.78, pp. 2784-2786, 2001.
2. Z. Ye, J. C. Campbell, Z. Chen, E. T. Kim, and A. Madhukar, "InAs quantum dot infrared photodetectors with In Ga As strain-relief cap layers," J. Appl. Phys., vol.92, pp. 7462-7468, 2002.
3. S. Chakrabarti, A. D. Stiff-Roberts, P. Bhattacharya, S. Gunapala, S. Bandara, S. B. Rafol, and S. W. Kennerly, "High-temperature operation of InAs-GaAs quantum-dot infrared photodetectors with large responsivity and detectivity," IEEE Photon. Technol. Lett., vol.16, no.5, pp. 1361-1363, May 2004.
4. S. D. Gunapala, S. V. Bandara, C. J. Hill, D. Z. Ting, J. K. Liu, S. B. Rafol, E. R. Blazejewski, J. M. Mumolo, S. A. Keo, S. Krishna, Y. C. Chang, and C. A. Shott, "Long-wavelength infrared (LWIR) quantum dot infrared photodetector (QDIP) focal plane array," Proc. SPIE, vol.6206, p. 62060J, 2006.
5. P. Aivaliotis, L. R. Wilson, E. A. Zibik, J. W. Cockburn, M. J. Steer, and H. Y. Liu, "Enhancing the dot density in quantum dot infrared photodetectors via the incorporation of antimony," Appl. Phys. Lett., vol.91, p. 013503, 2007.
6. G. Jolley, L. Fu, H. H. Tan, and C. Jagadish, "Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors," Appl. Phys. Lett., vol.91, p. 173508, 2007.
7. L. Jiang, S. S. Li, N. T. Yeh, J. I. Chyi, C. E. Ross, and K. S. Jones, "In G As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K," Appl. Phys. Lett., vol.82, pp. 1986-1988, 2003.
8. S. F. Tang, C. D. Chiang, P. K. Weng, Y. T. Gau, J. J. Ruo, S. T. Yang, C. C. Shih, S. Y. Lin, and S. C. Lee, "High-temperature operation normal incident 256×256 InAs-GaAs quantum dot infrared photodetector focal plane array," IEEE Photon. Technol. Lett., vol.18, no.8, pp. 986-988, Apr. 15, 2006.
9. S. Y. Lin, Y. R. Tsai, and S. C. Lee, "The comparison of InAs/GaAs quantum dot infrared photodetector and GaAs/(AlGa)As superlattice infrared photodetector," Jpn. J. Appl. Phys., vol.40, pp. L 1290-L 1292, 2001.
10. S. T. Chou, M. C. Wu, S. Y. Lin, and J. Y. Chi, "The influence of doping density on the normal incident absorption of quantum-dot infrared photodetectors," Appl. Phys. Lett., vol.88, pp. 173511-173513, 2006.
11. N. K. Cho, S. P. Ryu, J. D. Song, W. J. Choi, J. I. Lee, and H. Jeon, "Comparison of structural and optical properties of InAs quantum dots grown by migration-enhanced molecular-beam epitaxy and conventional molecular-beam epitaxy," Appl. Phys. Lett., vol.88, p. 133104, 2006.
12. C. Heyn, "Critical coverage for strain-induced formation of InAs quantum dots," Rhys. Rev. B, vol.64, p. 165306, 2001.
13. W. H. Chang, T. M. Hsu, K. F. Tsai, T. E. Nee, J. I. Chyi, and N. T. Yeh, "Excitation density and temperature dependent photoluminescence of InGaAs self-assembled quantum dots," Jpn. J. Appl. Phys., vol.38, pp. 554-557, 1999.