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Applied Physics Letters

Volumn 96, Issue 20, 2010, Pages

Performance improvement of phase change memory cell by using a cerium dioxide buffer layer

(5) Shang, Fei a Zhai, Jiwei a Song, Sannian b Song, Zhitang b Wang, Changzhou a

a TONGJI UNIVERSITY (China)

b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CERIUM DIOXIDES; DISSIPATED POWER; HEATING LAYER; PERFORMANCE IMPROVEMENTS; PHASE CHANGE MEMORY CELLS; RESET VOLTAGE; THERMAL SIMULATIONS; VOLTAGE PULSE;

BUFFER LAYERS; CERIUM; GERMANIUM; PULSE CODE MODULATION; TELLURIUM COMPOUNDS;

PHASE CHANGE MEMORY;

EID: 77952985770 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3428578 Document Type: Article

Times cited : (13)

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