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Volumn 49, Issue 4 PART 2, 2010, Pages

Characteristics of transparent ZnO-based thin-film transistors with high-k dielectric Gd2O3 gate insulators fabricated at room temperature

(6) Liu, Kou Chen a Tsai, Jung Ruey a Li, Chi Shiau a Chien, Po Hsiu a Chen, Jyun Ning a Feng, Wen Sheng a

a CHANG GUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD-EFFECT MOBILITIES; GADOLINIUM OXIDE; GATE INSULATOR; GATE VOLTAGES; HIGH-K DIELECTRIC; METAL-OXIDE; ON/OFF CURRENT RATIO; OXYGEN PRESSURE; PRESSURE REGIONS; ROOM TEMPERATURE; SUBTHRESHOLD SWING; ZNO; ZNO FILMS;

CARRIER CONCENTRATION; GADOLINIUM; GATE DIELECTRICS; GATES (TRANSISTOR); OXIDE FILMS; OXYGEN; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER DEPOSITION; PULSED LASERS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; ZINC OXIDE;

CARRIER MOBILITY;

EID: 77952738157 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.04DF21 Document Type: Article

Times cited : (14)

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