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Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 725-732

Simulation of flow and growth phenomena in a close-spaced reactor

(3) Mihopoulos, Theodoros G a Hummel, Steven G b Jensen, Klavs F a

a Massachusetts Institute of Technology Cambridge (United States)

b HEWLETT PACKARD LABORATORIES (United States)

Author keywords

Finite element; Rotating disk reactor (RDR); Stagnation point flow

Indexed keywords

FINITE ELEMENT METHOD; FLOW PATTERNS; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; PRESSURE EFFECTS; ROTATING DISKS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSPORT PROPERTIES;

ALUMINUM ARSENIDE; CLOSE-SPACED REACTORS; ROTATING DISK REACTOR (RDR);

SEMICONDUCTOR GROWTH;

EID: 0032477188 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00648-4 Document Type: Article

Times cited : (48)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.