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Volumn 3, Issue , 2006, Pages 2342-2345

Advanced buffers for AlGaN/GaN HEMT and InGaN/GaN MQW on silicon substrates

Author keywords

[No Author keywords available]

Indexed keywords

GAN BUFFER; LAYER STRUCTURE; MULTIPLE QUANTUM WELL STRUCTURES (MQW); 61.10.NZ; 68.37.PS; 73.61.EY; 78.55CR; 81.15.GH; 85.30.TV;

DEPOSITION; ELECTRON MOBILITY; EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SILICON; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTING ALUMINUM COMPOUNDS; HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33746353076 PISSN: 18626351 EISSN: None Source Type: Journal
DOI: 10.1002/pssc.200565263 Document Type: Conference Paper

Times cited : (5)

References (9)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.