Quantitative analysis of hump effects of gate-all-around metal-oxide-semiconductor field-effect transistors

Japanese Journal of Applied Physics

Volumn 49, Issue 4 PART 2, 2010, Pages

  Lee, Woojun ^a   Choi, Woo Young ^a  

^a Sogang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CORNER ROUNDING; DESIGN GUIDELINES; DOPING CONCENTRATION; GATE OXIDE THICKNESS; GATE-ALL-AROUND; HUMP EFFECT; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOSFETS; QUANTITATIVE ANALYSIS; SIMULATION STUDIES; CIRCUIT PERFORMANCE; COMPARATIVE STUDIES; ELECTRICAL CHARACTERISTIC; LOW BANDGAP; LOW POWER APPLICATION; LOW-POWER CONSUMPTION; METAL OXIDE SEMICONDUCTOR; MOS-FET; OFF CURRENT; ON CURRENTS; ON/OFF CURRENT RATIO; ROOM TEMPERATURE; SHORT-CHANNEL EFFECT; SIMULATION RESULT; SUBTHRESHOLD SWING; TUNNELING FET; TUNNELING FIELD-EFFECT TRANSISTORS;

DIELECTRIC DEVICES; FINS (HEAT EXCHANGE); GALLIUM ALLOYS; GATES (TRANSISTOR); ION BEAMS; MOS DEVICES; MOSFET DEVICES; SMELTING; MESFET DEVICES; TUNNELING (EXCAVATION);

FIELD EFFECT TRANSISTORS;

EID: 77952701346     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.04DC11     Document Type: Article

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