Capacitorless dynamic random access memory cell with highly scalable surrounding gate structure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 B, 2007, Pages 2143-2147

  Jeong, Hoon ^a   Lee, Yeun Seung ^a   Kang, Sangwoo ^a   Park, Il Han ^a   Choi, Woo Young ^a   Shin, Hyungcheol ^a   Lee, Jong Duk ^a   Park, Byung Gook ^a  

^a Seoul National University   (South Korea)

Author keywords

Capacitorless; DRAM; Floating body; Surrounding gate MOSFET; Vertical channel

Indexed keywords

CHANNEL CAPACITY; CHARGE CARRIERS; COMPUTER ARCHITECTURE; DYNAMIC RANDOM ACCESS STORAGE; GATE DIELECTRICS; NONDESTRUCTIVE EXAMINATION;

FLOATING BODIES; GATE STRUCTURES; SURROUNDING GATE AND VERTICAL CHANNEL (SGVC); VERTICAL CHANNELS;

MOSFET DEVICES;

EID: 34547864672     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2143     Document Type: Article

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