Contribution to the characterization of the hump effect in MOSFET submicronic technologies

IEEE International Conference on Microelectronic Test Structures

Volumn , Issue , 1999, Pages 188-193

  Brut, H ^a   Velghe, R M D A ^a  

^a STMicroeIectronics   (France)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MODELS; THRESHOLD VOLTAGE;

HUMP EFFECTS;

MOSFET DEVICES;

EID: 0032689592     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (10)