Modeling and parameter extraction of gate-all-around n MOS/SOI transistors in the linear region

Solid-State Electronics

Volumn 39, Issue 7, 1996, Pages 991-997

  Chang, Yun Shan ^a   Li, Sheng S ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DEFECTS; ELECTRIC CURRENT MEASUREMENT; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; TRANSCONDUCTANCE; VOLTAGE MEASUREMENT;

MOBILITY DEGRADATION FACTOR; PARAMETER EXTRACTION; PARASITIC SERIES RESISTANCE EFFECTS; POISSON EQUATION; SURFACE SCATTERING PARAMETER; SURFACE STATE DENSITY; THRESHOLD SURFACE POTENTIAL; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0030193508     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00004-4     Document Type: Review

References (22)

1. J. P. Colinge, M. H. Gao, A. Romano-Rodriguez, H. Maes and C. Claeys, IEDM-90, 595 (1990).
2. T. Sekigawa and Y. Hayashi, Solid-St. Electron. 27, 827 (1984).
3. C. Claeys and E. Simoen, Proc. Int. Symp. on Low Temperature Electronsics and High Temperature Superconductivity, pp. 109, Hawaii, May (1993).
4. E. Simoen, Ulf Magnusson and C. Claeys, IEEE Trans. Electron Devices ED-40, 2054 (1993).
5. J. P. Colinge and Akira Terao, IEEE Trans. Electron Devices ED-40, 78 (1993).
6. E. Simoen and CL Claeys, J. Phys. IV, 4, c6-51 (1994).
7. P. Francis, A. Terao, D. Flandre and F. Van de Wiele, IEEE Trans. Electron Devices ED-41, 715 (1994).
8. P. Francis, A. Terao, D. Flandre and F. Van de Wiele, Solid-St. Electron. 38, 171 (1995).
9. F. Balestra, S. Cristoloveanu, M. Benachit, J. Brini and T. Elewa, IEEE Electron Device Lett. EDL-8, 410 (1987).
10. R. J. Van Overstraeten, G. J. Declerck and P. A. Muls, IEEE Trans. Electron Devices ED-22, 282 (1975).
11. M. Matloubian, R. Sundaresan and H. Lu, IEEE Trans. Electron Devices ED-36, 938 (1989).
12. H. S. Wong, M. H. White, T. J. Krutsick and R. V. Booth, Solid-St. Electron. 30, 953 (1987).
13. S. C. Sun and J. D. Plummer, IEEE Trans. Electron Devices ED-27, 1497 (1980).
14. Y. C. Cheng and E. A. Sullivan, Surface Sci. 34, 717 (1973).
15. A. Hartstein, T. H. Ning and A. B. Fowler, Surface Sci. 58, 178 (1976).
16. T. H. Krutsick, M. H. White, H. S. Wong and R. V. H. Booth, IEEE Trans. Electron Devices ED-34, 1676 (1987).
17. A. Emrani, G. Ghibaudo and F. Balestra, Solid-St. Electron. 37, 111 (1994).
18. W. M. Huang, Z. J. Ma, M. Racanelli, D. Hughes, S. Ajuria, G. Huffman, T. P. Ong, P. K. Ko, C. Hu and B. Y. Hwang, IEDM-93, 735 (1993).
19. L. F. Giles, A. Nejim, C. D. Marsh, P. L. F. Hemment and G. R. Booker, IEEE Int. SOI Conf. p. 54 (1993).
20. T. Katayama, S. Nakashima, Y. Miyamura, M. Kataoka, M. Danbata, M. Imai, K. Izumi and N. Ohwada, IEEE Int. SOI Conf., pp. 75 (1994).
21. A. Emrani, F. Balestra and G. Ghibaudo, IEEE Trans. Electron Devices ED-40, 564 (1993).
22. J. G. J. Chern, P. Chang, R. F. Motta and N. Godinho, IEEE Electron Devices Lett EDL-1, 170 (1980).