메뉴 건너뛰기




Volumn 46, Issue 4 B, 2007, Pages 2046-2049

Novel gate-all-around metal-oxide-semiconductor field effect transistors with self-aligned structure

Author keywords

FinFET; Gate all around MOSFET; Oversized bottom gate; Self align; Short channel effect

Indexed keywords

DRAIN CURRENT; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

EID: 34547898111     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2046     Document Type: Article
Times cited : (9)

References (7)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.