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Volumn 46, Issue 4 B, 2007, Pages 2046-2049
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Novel gate-all-around metal-oxide-semiconductor field effect transistors with self-aligned structure
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Author keywords
FinFET; Gate all around MOSFET; Oversized bottom gate; Self align; Short channel effect
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Indexed keywords
DRAIN CURRENT;
GATES (TRANSISTOR);
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DEVICE MODELS;
SEMICONDUCTOR DOPING;
DRAIN INDUCE BARRIER LOWERING (DIBL);
GATE DELAY;
OVERSIZED BOTTOM GATE;
SHORT CHANNEL EFFECTS;
MOSFET DEVICES;
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EID: 34547898111
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.46.2046 Document Type: Article |
Times cited : (9)
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References (7)
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