Reactant-governing growth direction of indium nitride nanowires

Nanotechnology

Volumn 21, Issue 24, 2010, Pages

  Liu, H ^a,b   Shi, L ^a,b   Geng, X ^a,b   Su, R ^a,b   Cheng, G ^a,b   Xie, S ^a,c  

^a SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AU CATALYSTS; FIRST-PRINCIPLES CALCULATION; FREE ENERGY MINIMIZATION; GROWTH DIRECTIONS; HEXAGONAL CLOSE-PACKED; HEXAGONAL WURTZITE; INDIUM NITRIDE; INN NANOWIRES; MICROSTRUCTURE CHARACTERIZATION; STANDARD CUBIC CENTIMETERS PER MINUTE (SCCM); VAPOR-LIQUID-SOLID MECHANISM;

NITRIDES; ZINC SULFIDE;

NANOWIRES;

EID: 77952666515     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/24/245601     Document Type: Article

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