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Volumn 40, Issue 9, 2001, Pages 1427-1437

Analysis of light-emitting diodes by Monte Carlo photon simulation

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MONTE CARLO METHODS; PHOTONS; STATISTICAL METHODS; SURFACE PROPERTIES; TEXTURES;

EID: 0004628692     PISSN: 1559128X     EISSN: 21553165     Source Type: Journal    
DOI: 10.1364/AO.40.001427     Document Type: Article
Times cited : (100)

References (11)
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    • Design rules for high-brightness light-emitting diodes grown on GaAs substrate
    • S. J. Lee, “Design rules for high-brightness light-emitting diodes grown on GaAs substrate,” Jpn. J. Appl. Phys. 37, 509-516 (1998).
    • (1998) Jpn. J. Appl. Phys. , vol.37 , pp. 509-516
    • Lee, S.J.1
  • 5
    • 0032631399 scopus 로고    scopus 로고
    • Efficiency improvement in light-emitting diodes based on geometrically deformed chips
    • T. Ferguson, E. Schubert, and H. Yao, eds., Proc. SPIE
    • S. J. Lee and S. W. Song, “Efficiency improvement in light-emitting diodes based on geometrically deformed chips,” in Light-Emitting Diodes: Research, Manufacturing, and Applications III, I. T. Ferguson, E. Schubert, and H. Yao, eds., Proc. SPIE 3621, 237-248 (1999).
    • (1999) Light-Emitting Diodes: Research, Manufacturing, and Applications III, I , vol.3621 , pp. 237-248
    • Lee, S.J.1    Song, S.W.2
  • 8
    • 51149220122 scopus 로고
    • 30% external quantum efficiency form surface textured, thin-film light-emitting diodes
    • I. Schnitzer and E. Yablonovitch, “30% external quantum efficiency form surface textured, thin-film light-emitting diodes,” Appl. Phys. Lett. 63, 2174-2176 (1993).
    • (1993) Appl. Phys. Lett. , vol.63 , pp. 2174-2176
    • Schnitzer, I.1    Yablonovitch, E.2
  • 9
    • 21544461610 scopus 로고
    • Large-band-bandgap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technoloies
    • H. Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, “Large-band-bandgap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technoloies,” J. Appl. Phys. 76, 1363-1398 (1994).
    • (1994) J. Appl. Phys. , vol.76 , pp. 1363-1398
    • Morkoc, H.1    Strite, S.2    Gao, G.B.3    Lin, M.E.4    Sverdlov, B.5    Burns, M.6
  • 11
    • 0010436436 scopus 로고
    • Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555-620 nm spectral region using a thick GaP window layer
    • K. H. Huang, J. G. Yu, C. P. Kuo, R. M. Fletcher, T. D. Osen-towski, L. J. Stinson, M. G. Craford, and A. S. Liao, “Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555-620 nm spectral region using a thick GaP window layer,” Appl. Phys. Lett. 61, 1045-1047 (1992).
    • (1992) Appl. Phys. Lett. , vol.61 , pp. 1045-1047
    • Huang, K.H.1    Yu, J.G.2    Kuo, C.P.3    Fletcher, R.M.4    Osen-Towski, T.D.5    Stinson, L.J.6    Craford, M.G.7    Liao, A.S.8


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.