Microcrystalline silicon n-i-p solar cells prepared with microcrystalline silicon oxide (μc-SiOx:H) n-layer

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 3-4, 2010, Pages 1053-1056

  Smirnov, Vladimir ^a   Böttler, Wanjiao ^a   Lambertz, Andreas ^a   Wang, Haiyan ^a,b   Carius, Reinhard ^a   Finger, Friedhelm ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b ZHENGZHOU UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBER LAYERS; BACK CONTACT; CELL PERFORMANCE; ELECTRICAL AND STRUCTURAL PROPERTIES; HYDROGENATED MICROCRYSTALLINE SILICON; PHOTOTHERMAL DEFLECTION SPECTROSCOPY; RAMAN SCATTERING MEASUREMENTS; SOLAR CELL PERFORMANCE; WINDOW LAYER;

CARBON DIOXIDE; ELECTRIC PROPERTIES; FILM PREPARATION; OPTICAL PROPERTIES; SILICON COMPOUNDS; SILICON OXIDES; SILVER; SOLAR CELLS; SWITCHING CIRCUITS;

MICROCRYSTALLINE SILICON;

EID: 77952557366     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982830     Document Type: Conference Paper

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