Improved performance of SiGe doped-channel field-effect transistor using inductively coupled plasma etch

Semiconductor Science and Technology

Volumn 19, Issue 8, 2004, Pages 1053-1056

  Lee, Chun Hsin ^a   Wu, San Lein ^b   Chang, Shoou Jinn ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHENG SHIU UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; FIELD EFFECT TRANSISTORS; FREQUENCIES; INDUCTIVELY COUPLED PLASMA; PLASMA DENSITY; PLASMA ETCHING; PLASMA OSCILLATIONS; SEMICONDUCTOR DOPING;

DOPED CHANNEL FIELD EFFECT TRANSISTORS (DCFET); ELECTRON CYCLOTRON RESONANCE (ECR); GATE ETCHING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 4043108343     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/8/016     Document Type: Article

References (10)

1. Law V J and Jones G A C 1992 Semicond. Sci. Technol. 7 281
2. Hatta A, Kubo M, Yasaka Y and Itatani R 1992 Japan. J. Appl. Phys. 31 1473
3. Lee J H, Lee J W and Lee J Y 1997 J. Vac. Sci. Technol. A 15 573
4. Li X, Ling L, Hua X F, Oehrlein G S, Wang Y C and Anderson H M 2003 J. Vac. Sci. Technol. A 21 1955
5. Shur M 1987 GaAs Devices and Circuits (New York: Plenum)
6. Wu C L, Hsu W C, Shieh H M and Tsai M S 1995 IEEE Electron Device Lett. 16 112
7. Yang M T and Chan Y J 1996 IEEE Electron Device Lett. 43 1174
8. Lin Y M, Wu S L, Chang S J, Koh S and Shiraki Y 2003 IEEE Electron Device Lett. 24 69
9. Chuang H M, Cheng S Y, Liao X D, Chen C Y and Liu W C 2003 Electron. Lett. 39 1016
10. Chang S J, Juang Y Z, Nayak D K and Shiraki Y 1999 Mater. Chem. Phys. 60 22