Electrical properties and photoresponses of silicon nanowires with selective anchored gold nanoparticles via scanning probe bond breaking nanolithography

Japanese Journal of Applied Physics

Volumn 48, Issue 4 PART 2, 2009, Pages

  Wu, Chia Hao ^a   Yeh, Naichia ^a  

^a MINGDAO UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

3-AMINOPROPYL TRIMETHOXYSILANE; AEAPTMS; AMINOSILANE MONOLAYERS; AMINOSILANES; BOND-BREAKING; BOTTOM-UP AND TOP-DOWN; E-BEAM LITHOGRAPHY; ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTY; GOLD NANOPARTICLE; GOLD NANOPARTICLES; LOCAL FIELDS; NANO-BIOSENSORS; NANOFABRICATION TECHNIQUES; NANOMETER-SCALE RESOLUTION; NEW APPROACHES; P-TYPE SILICON; PHOTORESPONSES; RESEARCH TEAMS; SCANNING PROBES; SILANIZATIONS; SILICON NANOWIRES; SIO2 SURFACE; SURFACE CHEMICAL MODIFICATIONS;

CHEMICAL MODIFICATION; ELECTRIC WIRE; MONOLAYERS; NANOLITHOGRAPHY; NANOWIRES; PHOTOELECTRICITY; PROBES; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES; SILICON WAFERS; X RAY PHOTOELECTRON SPECTROSCOPY;

NANOPARTICLES;

EID: 77952483199     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.04C152     Document Type: Article

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