Effect of plasma treatment on interface property of BCN/GaN structure

Applied Surface Science

Volumn 253, Issue 3, 2006, Pages 1459-1463

  Shimada, Yoshiaki ^a   Chikamatsu, Kentaro ^a   Kimura, Chiharu ^a   Aoki, Hidemitsu ^a   Sugino, Takashi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

BCN; GaN; Passivation; Plasma treatment

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC POTENTIAL; GALLIUM NITRIDE; HEAT CONDUCTION; PASSIVATION; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACE PROPERTIES; INTERFACE STATE DENSITY; METAL-INSULATOR-SEMICONDUCTOR (MIS) STRUCTURES; PLASMA TREATMENT;

SEMICONDUCTOR MATERIALS;

EID: 33750720299     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.02.016     Document Type: Article

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