Novel heat dissipating cell scheme for improving a reset distribution in a 512M Phase-change Random Access Memory (PRAM)

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2007, Pages 96-97

  Kang, D H ^a   Kim, J S ^a   Kim, Y R ^d   Kim, Y T ^b   Lee, M K ^a   Jun, Y J ^a   Park, J H ^a,a   Yeung, F ^a   Jeong, C W ^a   Yu, J ^a   Kong, J H ^a   Ha, D W ^a   Song, S A ^e   Park, J ^e   Park, Y H ^c   Song, Y J ^a   Eum, C Y ^a   Ryoo, K C ^a   Shin, J M ^a   Lim, D W ^a   Park, S S ^a   Kim, J H ^a   Park, W I ^a   Sim, K R ^a   Cheong, J H ^a   Oh, J H ^a   Kim, J I ^a   Oh, Y T ^a   Lee, K W ^a   Koh, S P ^a   Eun, S H ^a   Kim, N B ^a   Koh, G H ^a   Jeong, G T ^a   Jeong, H S ^a   Kim, Kinam ^a   more..

^a Advanced Technology Development Team 2   (South Korea)

^b CAE Team   (South Korea)

^c Hynix Semiconductor Inc   (South Korea)

^d SAMSUNG Electronics   (South Korea)

^e Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DATA STORAGE EQUIPMENT; GERMANIUM; HEALTH; PHASE CHANGE MEMORY; RANDOM ACCESS STORAGE;

HIGH DENSITY PHASE; PARTIAL CRYSTALLIZATION; PHASE-CHANGE RANDOM-ACCESS MEMORY (PC-RAM); RANDOM ACCESS MEMORIES; RESISTANCE DISTRIBUTION; TARGET VALUE (T); VLSI TECHNOLOGIES;

NORMAL DISTRIBUTION;

EID: 47249114806     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2007.4339741     Document Type: Conference Paper

References (3)

1. J. H. Oh et al., IEDM Tech. Dig., pp.2.6.1-2.6.4 (2006).
2. A. Pirovano et al., IEEE Trans. on Elect. Dev., 51(3), 452 (2004).
3. S. Lai, IEDM Tech. Dig., pp. 10.1.1-10.1.4 (2003).