Observation of electron trapping along scratches on SiO2 surface in mirror electron microscope images under ultraviolet light irradiation

Journal of Applied Physics

Volumn 107, Issue 8, 2010, Pages

  Hasegawa, Masaki ^a   Shimakura, Tomokazu ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONCAVE SHAPE; CONTRAST CHANGES; CONVEX SHAPES; ELECTRON MICROSCOPE IMAGES; ELECTRON TRAPPING; EQUIPOTENTIAL SURFACES; INSULATOR FILMS; INTERNAL PHOTOEMISSION; NEGATIVE CHARGING; PHOTOEXCITED ELECTRONS; SPATIALLY RESOLVED; SPECTROSCOPIC CHARACTERIZATION; SURFACE DENSITY; THRESHOLD ENERGY; TRAPPED ELECTRONS; ULTRAVIOLET LIGHT IRRADIATION; ULTRAVIOLET LIGHTS; UV IRRADIATION; UV LIGHT;

ELECTRON MICROSCOPES; ELECTRON TRAPS; ELECTRONS; IRRADIATION; MIRRORS; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES; SILICON WAFERS; SPECTROSCOPIC ANALYSIS; ULTRAVIOLET RADIATION;

SURFACE DEFECTS;

EID: 77952405657     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3383046     Document Type: Article

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